首页 |元器件品牌

BC807-25 [BL Galaxy Electrical]

PNP General Purpose Amplifier; PNP通用放大器
BC807-25
型号： BC807-25
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

PNP General Purpose Amplifier
PNP通用放大器

晶体 放大器 晶体管 光电二极管
文件： 总4页 (文件大小：411K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BL Galaxy Electrical  
Production specification  
PNP General Purpose Amplifier  
BC807-16/-25/-40  
FEATURES  
Pb  
Lead-free  
z
Ideally suited for automatic insertion.  
Complementary NPN type available  
BC817  
z
z
Epitaxial planar die construction.  
APPLICATIONS  
z
This device is designed for general purpose amplifier  
and switching applications at currents to1.0A.  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
BC807-16  
BC807-25  
BC807-40  
5A1  
5B  
5C  
SOT-23  
SOT-23  
SOT-23  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
-50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-45  
V
-5  
V
Collector Current -Continuous  
Total Device Dissipation  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
-500  
300  
mA  
mW  
℃/W  
℃
PD  
RθjA  
Tj,Tstg  
375  
-55to+150  
Document number: BL/SSSTC041  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
PNP General Purpose Amplifier  
BC807-16/-25/-40  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Parameter  
Symbol  
Test conditions  
MIN MAX UNIT  
Collector-base breakdown voltage  
V(BR)CBO  
IC=-10μA IE=0  
-50  
V
V
Collector-emitter breakdown voltage  
V(BR)CEO  
IC=-10mA IB=0  
-45  
-5  
Emitter-base breakdown voltage  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
V(BR)EBO  
ICBO  
IE=-1μA IC=0  
μV  
-0.1 μA  
-0.2 μA  
-0.1 μA  
VCB=-45V IE=0  
VCE=-40V IB=0  
VCE=-4V IC=0  
ICEO  
IEBO  
DC current gain  
807-16  
807-25  
807-40  
100 250  
160 400  
250 600  
hFE  
VCE=-1V IC=-100mA  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
IC=-500mA IB=-50mA  
IC=-500mA IB=-50mA  
-0.7  
-1.2  
V
V
VBE(sat)  
VCE=-5V  
IC=-10mA  
Transition frequency  
fT  
100  
MHz  
f=100MHz  
Document number: BL/SSSTC041  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
PNP General Purpose Amplifier  
BC807-16/-25/-40  
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Document number: BL/SSSTC041  
Rev.A  
www.galaxycn.com  
3
BL Galaxy Electrical  
Production specification  
PNP General Purpose Amplifier  
BC807-16/-25/-40  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
A
SOT-23  
Dim  
A
Min  
2.85  
1.25  
Max  
2.95  
1.35  
E
K
B
B
C
D
E
1.0Typical  
0.37  
0.35  
1.85  
0.02  
0.43  
0.48  
1.95  
0.1  
J
D
G
G
H
J
H
0.1Typical  
C
K
2.35  
2.45  
All Dimensions in mm  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-23  
Shipping  
BC807-16/-25/-40  
3000/Tape&Reel  
Document number: BL/SSSTC041  
Rev.A  
www.galaxycn.com  
4

相关型号：

BC807-25,115

 Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
NXP

BC807-25,215

 TRANS PNP 45V 0.5A SOT23
ETC

BC807-25,235

 TRANS PNP 45V 0.5A SOT23
ETC

BC807-25-13

 Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES

BC807-25-13-F

 Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
DIODES

BC807-25-7

 PNP SURFACE MOUNT TRANSISTOR
DIODES

BC807-25-7-F

 PNP SURFACE MOUNT TRANSISTOR
BL Galaxy Ele

BC807-25-7-F

 Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3
DIODES

BC807-25-G

 General Purpose Transistors
COMCHIP

BC807-25-GS18

 Transistor,
VISHAY

BC807-25-MR

 TRANSISTOR BC807-25 MINIREEL 500PCS
ETC

BC807-25-Q

 45 V, 500 mA PNP general-purpose transistorsProduction
NEXPERIA
©2020 ICPDF网 联系我们和版权申明